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New 250-V N-Channel TrenchFET (R) Power MOSFETs

Vishay's New 250-V N-Channel TrenchFET® Power MOSFETs Offer Up to 50% Improved On-Resistance in SO-8 and D2PAK Footprints
SANTA CLARA, CALIFORNIA — January 28, 2004 — Siliconix incorporated (NASDAQ: SILI), an 80.4%-owned subsidiary of Vishay Intertechnology, Inc. (NYSE: VSH), today released a trio of 250-V n-channel TrenchFET® power MOSFETs that offer the lowest on-resistance available in the SO-8, PowerPAK® SO-8, and D2PAK packages for this voltage rating.

The Si4434DY (LITTLE FOOT® SO-8), Si7434DP (PowerPAK SO-8), and SUM45N25-58 (D2PAK) are designed to serve as primary switches in dc to dc converters, including forward converters and half-bridge converters, as well as in ac-to-dc converters and inverters, for telecom power supplies, distributed architectures, and miniature power modules.

The new devices offer greatly improved on-resistance values compared with competing devices of the same size. The Si4434DY and Si7434DP both feature a maximum on-resistance value of 155 mΩ at a 10-V gate drive and typical gate charge value of 34 nC. In the low-thermal-resistance D2PAK package, the SUM45N25-58 features on-resistance on 58 mΩ, a gate charge value of 95 nC, and a maximum junction temperature rating of 175 °C.

Samples and production quantities of the 250 V Si4434DY, Si7434DP, and SUM45N25-58 n-channel power MOSFETs are available now, with lead times of 10 to 12 weeks for larger orders.

Siliconix is a leading manufacturer of power MOSFETs, power ICs, analog switches, and multiplexers for computers, cell phones, fixed communications networks, automobiles, and other consumer and industrial electronic systems. With 2002 worldwide sales of $372.9 million, the Company's facilities include a Class 1 wafer fab dedicated to the manufacture of power products in Santa Clara, California, and an affiliated Class 1 wafer fab located in Itzehoe, Germany. The Company's products are also fabricated by subcontractors in Japan, Germany, China, and Taiwan. Assembly and test facilities include a company-owned facility in Taiwan, a joint venture in Shanghai, China, and subcontractors in the Philippines, China, Taiwan, Israel, and the United States.


Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, MOSFETs, optoelectronics, and selected ICs) and passive electronic components (resistors, capacitors, inductors, sensors, and transducers). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical markets. Its product innovations, Successful Acquisition strategy, and "one-stop shop" service Have made Vishay a global industry leader. Vishay Can Be found on the Internet at http://www.vishay.com

Subject: EES.
Student: Juan José Núñez Ceballos
Source: http://www.vishay.com/company/press/releases/2004/040128mosfets/
Reflection: How not to love God with so much blessing that wants to ... [Jn14: 15] He will give you the forgiveness of your sins and the Holy Spirit when we obey his Gospel (the Bible says it, not me !!!).

Cristening Card Messages

Siliconix Targets Automotive 12-V Boardnet With New P-Channel-40-V and-60-V TrenchFET (R) Power MOSFETs

Up to 90% Lower On-Resistance Than Industry's Next-Best Devices.

SANTA CLARA, CALIFORNIA — March 29, 2004 — Automotive 12-V boardnet high-side switches and electric motor drives are the target applications for a record-setting family of p-channel MOSFETs announced today by Siliconix incorporated (NASDAQ: SILI), an 80.4%-owned subsidiary of Vishay Intertechnology, Inc. (NYSE: VSH).

The new −40-V and −60-V devices are the first with these breakdown voltage ratings to be built using Vishay's advanced p-channel technology, which reduces MOSFET on-resistance to record-low levels. Maximum rDS(on) ratings range from 15 mΩ down to 4.2.mΩ for the six devices released today.

Because p-channel MOSFETs require no additional high-side driver circuitry for turn-on, these new −40-V and −60-V TrenchFETs will help designers to reduce component count and improve reliability in automotive and industrial systems compared with n-channel solutions.

When used to replace previous-generation p-channel devices, the new TrenchFETs give designers the opportunity to lower system power consumption as well. Compared with the next-best p-channel MOSFETs on the market with the same voltage ratings and package outlines, conduction losses for the new devices are reduced by up to 90%.

Package options for the −40-V devices are the standard DPAK (SUD50P04-09L), the thermally enhanced D2PAK (SUM110P04-04L), and the lead-less, 1.07 mm-high PowerPAK® SO-8 (Si7463DP). The −60-V TrenchFETs also are offered in the DPAK (SUD50P06-15L), the thermally enhanced D2PAK (SUM110P06-07L), and PowerPAK SO-8 (Si7461DP). The DPAK and D2PAK devices are rated for a maximum junction temperature of 175 °C, while the PowerPAK SO-8 TrenchFETs are rated for up to 150 °C.

Summary of Device Specifications

Samples and production quantities of the new p-channel TrenchFET power MOSFETS are available now with lead times of 10 to 12 weeks for larger orders.

Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, MOSFETs, optoelectronics, and selected ICs) and passive electronic components (resistors, capacitors, inductors, sensors, and transducers). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical markets. Its product innovations, successful acquisition strategy, and "one-stop shop" service have made Vishay a global industry leader. Vishay can be found on the Internet at http://www.vishay.com .

Asignatura: EES.
Student: Juan José Núñez Ceballos
Source: http://www.vishay.com/company/press/releases/2004/040329mosfets/
Reflection: however begin to attain divine wisdom ( celestial, heaven) when we begin to fear (respect, honor, obey) God [Pr1: 7] and salvation when we believe and obey the gospel of Christ [Mr16 :15-16] Both must go hand in hand.

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New TrenchFET (R) MOSFETs Break Performance Records in Tiny LITTLE FOOT (R) SC-89 and SC-75 Packages

SANTA CLARA, CALIFORNIA, May 24, 2001-A series of new TrenchFETs That September records for on-resistance in the tiny LITTLE FOOT ® SC-89 and SC-75 packages were announced today by Siliconix incorporated (NASDAQ: SILI), an 80.4%-owned subsidiary of Vishay Intertechnology (NYSE: VSH). The smallest MOSFETs on the market, the new devices will serve as a power-efficient replacement for the digital bipolar transistors used for simple or light-load switching in portable communications systems, computer motherboards, power supply converter circuits, and battery-operated equipment.

Devices in the 3-pin LITTLE FOOT SC-89, with a footprint area measuring 1.6 mm by 1.6 mm and a height profile of just 0.6-mm, include the Si1012X, a single n-channel 20-V TrenchFET with on-resistance of just 1.25 ohms at a 1.8-V gate drive-76% lower than any competing device in the same

Fully on at a gate-source voltage of 1.8 V, the Si1012X requires significantly less power to operate than the digital bipolar transistors it will replace. The new device further improves on existing industry standards with a 500-mA steady state continuous drain current (TA=25°C) that offers an improvement of as much as 66% over competing devices, making it suitable for a wide range of low supply voltage applications. A 5-ns turn-on time, which lowers circuit timing delays, also sets a record for this package type and is nearly four times faster than the nearest competitor.

Also released today was a dual-channel version of the same device. The new Si1024X combines two MOSFETs in a 6-pin LITTLE FOOT SC-89 package with the same specifications per channel as the Si1012X and the same footprint and height profile as the 3-pin SC-89.

With a height profile that is 45% thinner than the SOT-23 and SC-70 formats, the new SC-89 LITTLE FOOT MOSFETs allow small to medium loads to be switched with maximum efficiency in even the thinnest mobile communications and computing products.

Along with the Si1012X and Si1024X, Vishay Siliconix will soon release more than a dozen additional 20-V MOSFETs in the SC-89 and SC-75 packages, including n- and p-channel devices. Maximum on-resistance ratings for these devices will range from 0.7 Ω to 9 Ω at a gate-source voltage of ±4.5 V. All devices in both package types feature ESD protection to reduce the risk of electrostatic damage during handling.

Samples of the Si1012X and Si1024X are available now. Production quantities will be available in Q1 2001, with lead times of four weeks for larger orders.


Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, MOSFETs, optoelectronics, and selected ICs) and passive electronic components (resistors, capacitors, inductors, sensors, and transducers). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical markets. Its product innovations, successful acquisition strategy, and "one-stop shop "service Have made Vishay a global industry leader. Vishay Can Be found on the Internet at http://www.vishay.com .

Subject: ESS .
Student: Juan José Núñez Ceballos
Source: http://www.vishay.com/company/press/releases/2001/010524trenchfet/
Reflection: sometimes a bit difficult to fully trust in what they say the Holy Word to see so much manipulation of these, frauds, interpretations, but it is obvious to understand that these are not interpreted [2Pe1: 20]

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Co-packaged MOSFET s reduce space, deliver performance

Key Benefits • High- and low-side MOSFETs in one compact 6-mm x 3.7-mm package
• On-resistance down to 5.8 mΩ
• Maximum current up to > 17 A
• Lowers solution space and cost compared to two discrete MOSFETs, saving
clearance and labeling space
• Simplifies layout
• Reduces parasitic inductance from PCB traces, increasing efficiency and reducing
ringing
APPLICATIONS
• System power, POL, low-current dc-to-dc, and synchronous buck in notebooks
• VRMs
• Power modules
• Graphics cards
• Servers
• Gaming consoles

Asignatura: EES.
Student: Juan José Núñez Ceballos
Source: http://www.vishay.com/docs/49952/pt0182_0.pdf
Reflection: now clear that, one hears of sin [1Co6: 9 -10] and this and that, a God who can not see, the thing is that belief is what he says in his Holy Word (in which very clearly defines each of the things we've heard of him) [2Ti3 :16-17] This belief is obedience.

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Power MOSFETs TrenchFET(R) Gen III

New Breakthrough Technology Lowers On-Resistance up to 40% While Improving Gate Charge

Key Features and Benefits: Low
conduction and switching losses enable increased efficiency and reduced power consumption

•Record-breaking maximum on-resistance at VGS = 4.5 V rating is up to 35% - Down to 0.0017 Ω
•Maximum on-resistance at VGS = 10 V is also up to 40% lower - Down to 0.0012 Ω
•Figure of Merit (FOM) of on-resistance times gate charge up to 42% lower - Down to 85 mΩ-nC
12-V to 40-V options, all with 20 V VGS

Package options in SO-8 footprint area include:

•Thermally advanced PowerPAK® SO-8
•Standard SO-8
•PolarPAK® with double-sided cooling
Also available in the thermally advanced PowerPAK 1212-8 and PowerPAK ChipFET®, about 1/3 and 1/5 respectively of the SO-8 footprint area

Circuit Applications

•Synchronous Rectification
•Synchronous Buck Converter
◦Low-Side MOSFET
•OR-ing
Product Applications
•VRM
•POL
•Servers
•Fixed Telecom
•Power Supplies
TrenchFET® Gen III

TrenchFET® Gen III power MOSFETs are ideal for low-side applications, where their low on-resistance minimizes conduction losses and improves efficiency compared to previous-generation MOSFETs. Also lower gate charge yields approximately 1/3 lower FOM in some devices, providing lower switching-losses over the previous generation.

Subject: EES.
Student: Juan José Núñez Ceballos
Source: http://www.vishay.com/mosfets/pt0105-list/
Reflection: But even if we have offended God by our sins, He is merciful and do not want to anger [Ro1 :18-19] has come upon us, he wants to save us from this [1Te5, 9]