Sunday, June 27, 2010

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nanoparticles Benefits

describes how nanoparticles are formed by a very small number of silver atoms can protect the cell damage caused by ethanol. Researchers applied

silver nanoparticles astrocytes exposed to ethanol. These types of attached cells to neurons and is extensively used as models to study the pathophysiological mechanisms of alcohol in fetal alcohol syndrome, a disease that develops in some unborn babies when the mother consumes excessive levels of alcohol, which leads to a number of serious neurological disorders.

Alcohol is particularly harmful effects on nerve cells and in the specific case of astrocytes, induces programmed cell death and disruption of the actin cytoskeleton. Following the application of silver nanoparticles to cells exposed to ethanol, the actin cytoskeleton shows a marked improvement and no cell death occurs.

The study combines analysis of the electrocatalytic properties of silver nanoparticles with the consideration of their potential biological applications. The authors also discovered that nanoparticles prevent alterations induced by other primary alcohols such as methanol and butanol, but not those induced by other toxic substances like hydrogen peroxide. Maria Linares 19881179


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silver nanoparticles to identify, locate and eliminate cancer

Another weapon in the arsenal against cancer: nanoparticles that identify, locate and kill specific cancer cells without touching cells healthy.

the researchers synthesized gold nanoparticles between two pieces of iron oxide. Then the particles attached to antibodies that target a molecule found only in colorectal cancer cells. Once linked, the nanoparticles are absorbed by cancer cells.

To kill cells, researchers use a near infrared laser, a wavelength at the levels used does not damage normal tissue. Radiation, however, it is absorbed by the gold nanoparticles. This causes cancer cells to heat up and die. The

goal, according to lead author and graduate student in biomedical Dickson Kirui, is to improve technology and make it suitable for testing in a clinical trial with humans. The researchers are now working on a similar experiment that attacks prostate cancer cells.

Gold has potential as a key material for cancer therapy in future intelligent. It is biocompatible, inert and relatively easy to modify chemically. Changing the size and shape of the gold particles can adjust to respond to different wavelengths of energy.

Once hit by the gold particles cell cancer are destroyed by heat (just a few degrees above normal body temperature) while the surrounding tissue remains unharmed. A very low power laser has no effect on adjacent cells because that particular wavelength, it heats the cells if they are loaded with nanoparticles, the researchers said.

The use of iron oxide in other parts of the particles could one day allow scientists also wish to track the progress of cancer treatment using magnetic resonance imaging exploiting the magnetic properties of the particles. Maria Linares 19881179


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Catalyst's mission is to reduce pollutants
elements contained in the exhaust of a vehicle by the technical
catalysis.
This is a device installed in the exhaust pipe near the engine, since there's
maintain a high temperature gases.
This heat energy goes to the catalyst and raises its own temperature
, a fact that this device is essential to have optimal performance
,
reached between 400 and 700 degrees Celsius. Externally, the catalyst

is a stainless steel container,
often provided with a metal casing-screen
exothermic, also steel, which protects the vehicle's
the high temperatures reached. Inside
contains a ceramic support or monolith of
oval or cylindrical, with a structure of multiple cells
honeycomb, with a density of approximately 450
those of cells per square inch
(about 70 per centimeter square).
its surface is impregnated with a resin containing
noble metal elements such as platinum (Pt) and
Palladium (Pd), which allow the function oxidation, and Rhodium (Rh), which is involved in the reduction
. These precious metals
act as active catalysts, ie
initiate and accelerate chemical reactions between other substances with which
contact without participating themselves in
these reactions. The exhaust gases pollutants generated by motor
, when in contact with the surface active catalyst
are partially processed
innocuous items nonpolluting. Maria Linares


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metals as catalysts for Cancer

In the dramatic struggle that cancer medicine pounds of transition metals have revealed as a valuable allies. Since the late sixties were observed property that the cis-diamino dicloroplatino (II) known as "cisplatin" appeared to inhibit abnormal cell growth of cells. According to research carried out, platinum binds to one of the nitrogen atoms of guanine (one of the nitrogenous bases of DNA), causing an abnormal twisting of the DNA helix that prevents its replication. The disadvantage of cisplatin is its side effects, failing to address certain tumors and the possibility that cancer cells develop resistance.
A second generation of drugs, based on the trans-platinum, avoiding some of these drawbacks. In addition, proper selection of ligands (heterocycles, aliphatic amines ... etc) can make them highly selective for the various tumors.
complexes Ga (III) have also shown their effectiveness due to the similarities between the Ga ion (III) ion and Fe (III) allowing the first involving interfering with cellular iron metabolism.
compounds Sn (IV) have also shown its effectiveness to bind to DNA phosphate groups causing apoptosis ("suicide" or mechanism of natural cell death when it detects a serious dysfunction in them). Have the advantage of less toxicity and fewer side effects, especially the absence of vomiting.
Although the complex has shown that virtually all the transition metals may have antitumor properties (Pd, Cu, Fe, Mo, Au, Rh, Zr ...) the most studied are those of titanium (IV ) and ruthenium (II / III). The latter metal has a very curious feature, and the ability to synthesize macromolecules that serve as capsules hidden inside active drugs against cancer cells. True Trojan horses that can effectively attack from within vengeance.
Maria Linares 19881179
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The losses in a bridge rectifier can easily become significant when low voltages are being rectified. The voltage drop across the bridge is a good 1.5 V, which is a hefty 25% with an input voltage of 6V. The loss can be reduced by around 50% by using Schottky diodes, but it would naturally be even nicer to reduce it to practically zero. That?s possible with a synchronous rectifier. What that means is using an active switching system instead of a ?passive? bridge rectifier.
The principle is simple: whenever the instantaneous value of the input AC voltage is greater than the rectified output voltage, a MOSFET is switched on to allow current to flow from the input to the output. As we want to have a full-wave rectifier, we need four FETs instead of four diodes, just as in a bridge rectifier. R1?R4 form a voltage divider for the rectified voltage, and R5?R8 do the same for the AC input voltage. As soon as the input voltage is a bit higher than the rectified voltage, IC1d switches on MOSFET T3.
Just as in a normal bridge rectifier, the MOSFET diagonally opposite T3 must also be switched on at the same time. That?s taken care of by IC1b. The polarity of the AC voltage is reversed during the next half-wave, so IC1c and IC1a switch on T4 and T1, respectively. As you can see, the voltage dividers are not fully symmetrical. The input voltage is reduced slightly to cause a slight delay in switching on the FETs. That is Better Than Them switching on too soon, Which Would Increase the Loss .[...] Author: Wolfgang Schubert - Copyright: Elektor Electronics Magazine
Subject: ESS.
Student: Pedro Jose Contreras Urbina

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New mathematical model describes the behavior of MOSFET at high frequencies with greater accuracy.


(EOL / Gustavo Martinez) .- Experts from Philips and the University of Pennsylvania, United States Together, have developed jointly a new MOSFET model, a more accurate calculation based and extensively used, the potential of superficie.De according to its developers, the new model produces better predictions of actual performance of integrated circuits that models currently used, specifically when it comes to large scale device integration and application of high frecuencia.Así it was announced that the model has been sent to the CMC (Compact Model Council), seeking to become the new industry standard model electrónica.El CMC promotes standardization in the use and implementation of mathematical models describing the behavior transistors, to facilitate the exchange of designs circuitos.El council was created in 1996 and consists of 27 semiconductor companies and suppliers of circuit simulators. The CMC is in the process of selecting a replacement for current standard MOSFET model, which will be replaced before year's end.
The model developed by Philips and the educational institution, is based on an approximation of the surface potential throughout the operating regime, while the current model is based on a simplified description of two regions boundaries and approximate mathematical techniques between the two new model was named límites.El PSP, because it was built based on the MOS model 11, Philips and model SP Pensilvania.En State University presenting this model, it was mentioned that the PSP provides a better description of behavior when the device operates at high frequencies, such as RF devices used in a variety of wireless devices. Additionally
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noted that substantially increases the complexity of the model, by solving the age-old problems of modeling of transistors, such as the incorporation of the gate current, the gate induced noise and static effects. "We that our model represents a significant advances in the modeling of transistors, "said Gennady Gildenblat, professor of electrical engineering at Pennsylvania State University." The new PSP model predicts more accurately manage the behavior of the transistor at frequencies up to 50GHz.
Subject: ESS.
Student: Pedro Jose Contreras Urbina

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300W FM amplifier with MOSFET technology


An ultra compact FM amplifier employing cognitive the latest RF Techniques for an ultra-stable high effeciency design. This unit can be supplied with a universal input switched mode power supply. This can be used on any mains voltage system in the world. A built in heatsink and fan assembly provides more than adequate cooling to the unit ensuring 24 hour operation. On board harmonic filtering provides that needed reassurance that your signal is where it should be. With an attenuator it works perfectly with any exciter.
Supplied with a cooling fan for worry free 24 hour operation.
Technical specifications:- Power Output 300W - Power Input: 1W (1-10W with
this )- Harmonic Output -60dBc - Spurious Output -80dBc - Input Voltage (PA module) 48 volt 7.5 Amps - Input Voltage (Power supply) 90-270 VAC - Dimensions, PA 185mm x 100mm x 75mm (100mm inc 80mm fan)
If you need to drive this amplifier with more power, have a look at our attenuators
here . It will than be possible to drive this amplifier with any power level between 1W and 10W. Also do not forget that a small attenuator (1-3dB) is actually recommended as it ensures proper load to the driver in all conditions and increases stability of the entire system. Such attenuators are typically used in professional gear.
Asignatura: EES.
Alumno: Pedro Jose Contreras Urbina
Fuente:
Http://www.neoteo.com/puente-h-con-mosfet-para-motores-cc.neo

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transceiver power,

The transceiver designed by Joan (EA3FXF) called " mosquito " has several interesting proposals. The first is to use a very low cost MOSFET is IRF510 as the only stage. At the reception operation as an oscillator and mixer, and operating as transmission oscillator and power amplifier capable of delivering ~ 1W output power. The second interesting point is that was designed to be used with a SDR software, no audio stages in the transceiver itself. Finally, the touch of genius to use a 220V-12V transformer as an impedance adapter. It is a very simple and easy to play.

Subject: ESS.
Student: Pedro Jose Contreras Urbina
Source:
http://lu7hz.blogspot.com/2009/11/transceptor-de-potencia-el-mosquito-de.html

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EA3FXF Mosquito Using MOSFET amplifier using a QRP transmitter


digital components can be used in combination with a MOSFET as shown in the article Paul Harrison (G4VAM) extracted from the magazine Sprat. Oscillator signal, for which general design can be used N7KSB seen above, feeds a pair of NAND gates. The first one is configured as an investor while the second is used to manipulate next step. The amplifier uses a MOSFET (IRF510 for example) whose output is filtered by a lowpass calculated for the frequency. The RFC value is not critical and should be one that represents a reactance of 500 Ohms or more to the frequency. This amplifier can deliver 1 to 2 W on a load of 50 Ohms.
Subject: ESS.
Student: Pedro Jose Contreras Urbina

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MOSFET transistor



At the site of Pekka (OH1TV) among many other interesting designs worth checking out is QRP CW transmitter based on a single MOSFET transistor. There are many projects transmitters for CW QRPp transistor (ie with less than 1W) but for powers of 2 to 5W is used normally to a second stage, or even a third, as in the case of designs derived from Pixie (in itself in two stages) to which is added a PA to increase power to the range of 2 to 5W. The interesting thing about this design is to see the technique in which Pekka feedback control so that the current in the crystal is not damaged, as would happen if we want to generate an oscillator with a conventional design directly on this level of power. The rest of the circuit is quite conventional, manipulation may optionally be a floating or against mass. In the conventional lowpass output filter ensures that the harmonic radiation is acceptable.
Subject: ESS.
Student: Pedro Jose Contreras Urbina
Source:
http://lu7hz.blogspot.com/2010/01/transmisor-qrp-de-un-transistor-mosfet.html

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OH1TV MOSFET H-Bridge for DC motors

Currently, to operate DC motors allowing operation in both directions of rotation are used, in most cases, circuits with transistors MOSFET instead of the generic keys SW1 to SW4 mentioned above. Some designers prefer to use P-channel transistors for the top sides and N for the lower channel. The advantage of this design concept is that the voltages required to activate the Gates of the P-channel transistors may draw directly from the supply used for the motor. If instead we use N-channel transistors on the upper side of the H, the voltage needed to activate the Gates must come from a booster to operate above the nominal motor power. Observe the following picture to understand this concept:
switches replaced by transistors Within the H-bridge MOSFET and power flow to achieve the two senses of giro.Para obtain a given rotation (any), as we discussed in the initial examples, IRFZ44N MOSFET transistors shown in picture must behave like real keys switches. As seen from the transistor data sheet used for this type of N-channel MOSFET transistor drive at full capacity, offering the least resistance between Drain and Source, Gate voltage source must be about more positive and order from 2 to 4 Volts. Assuming that the transistor Q1 (in rotation) and Q3 (in the other direction of rotation) offer the least resistance, the potential of 12 Volts feeding the respective Drains will (depending on the selected turn) to the motor, as shown in the figure above.
But back on the theory that exist in the Source 12Volts at the Gate we apply a voltage between 14 and 16 Volts, ie, 2 to 4 volts above the source. Otherwise, the voltage needed to activate the transistor at maximum driving is deducted from the power supply and the motor will reach 10 volts or less. Thus, we will have a maximum current flow through Drain - Source to turn the motor as possible, with a potential difference of 2 volts or more between these two terminals the transistor. This amounts, in the words of power, that 2 Volts multiplied by the maximum motor current is a power dissipated as heat in the transistor. The greater the power required to operate the motor, the greater the heat generated by the transistors, ergo, the greater the size of the heatsinks. This, of course, speak very bad circuit designer who will never understand why so hot transistors in the upper branches.

Subject: ESS.
Student: Pedro Jose Contreras Urbina

Saturday, June 26, 2010

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power MOSFET to increase the efficiency of sources Introduction to Power MOSFET

Recent technological advances allow to reach the minimum resistance Rds (on) industry in applications OR-ing MOSFET



STMicroelectronics announced a new power MOSFET, the STV3000NH02L, developed with innovative technology, ribbon-bonding which achieves an Rds (on) typical of 800 micro-ohms (0.8 milliohms), to reduce losses and increase efficiency in power supplies. This new device, N-channel, high current, is particularly suitable for power supplies in parallel configuration, used to increase system reliability in server applications. The new transistor
20 V, which is also ideal for reducing secondary rectification losses in DC-DC converters, high efficiency, offering excellent protection against short circuit conditions, with very low downtime.
The parallel configuration of power is often used to provide redundancy in critical systems and increase capacity. Originally, diodes were used for this function, but were replaced by MOSFETs to achieve higher benefits. Now, the minimum loss of STV300NH02L is a new step forward in power efficiency.
more info.

Subject: ESS.
Student: Pedro Jose Contreras Urbina
Source: http://www.elektor.es/noticias/mosfet-de-potencia-para-aumentar-la-eficiencia-en.374049.lynkx

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Applications:

The most common way is to use MOSFET transistors in circuits CMOS type, consisting in the use pMOS and nMOS transistors complementary. See

CMOS technology applications are the most common discrete MOSFET:


• voltage-controlled resistance.


• Power switching circuits (HEXFET, FREDFET, etc).


• frequency mixers, double gate MOSFET.


Advantages:

The main application of the MOSFET is in integrated circuits, p-MOS n-MOS and c-mos, due to several advantages over bipolar transistors:


• Energy consumption very low static .


• Size much lower than the bipolar transistor (currently about half a micron).


• High integration due to its small size.


• Operation by stress, are controlled by voltage and therefore have a very high input impedance. The current flowing through the gate is the order of nanoamperes.


• A circuit made with resistance MOSFET does not need, saving surface involved.


• The switching speed is very high, being the order of nanoseconds.


• Whenever there are more applications in high frequency converters and low power.
Subject: ESS.
Student: Pedro Jose Contreras Urbina
Source: http://aeronuts.foroactivo.com/novedades-f15/iniciacion-a-los-mosfet-uso-en-airsoft-t130.htm

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MOSFET: Metal Oxide Semiconductor Field Effect Transistor






MOSFET means "Metal Oxide Semiconductor FET" or insulated gate FET

A special type of transistor that has a version FET NPN and one PNP.

The NPN is called N-channel MOSFET and PNP is called P-channel MOSFET

A thin layer of insulating material made of silicon dioxide (SiO2) (also called "silica" or "silica") is placed on the side of the semiconductor and a metal layer is placed on the side of the gate (GATE) (see figure)

The N-channel MOSFET the "N" is connected to the source (source) and drain (drain)
The P channel MOSFET the "P" is connected to the source (source) and drain (drain)

bipolar transistors in the current flowing through the collector is controlled by the current flowing through the base. However in the case of FET transistors, the output current is controlled by an input voltage (electric field). In this case there is no input current.

MOSFET transistors are easily damaged and must be handled with care. Because the oxide layer is very thin, can be destroyed easily if there is high voltage or static electricity.



Subject: ESS.
Student: Pedro Jose Contreras Urbina
Fuente: http://www.unicrom.com/tut_MOSFET.asp