Sunday, June 27, 2010
How To Build Merbau Fence
OH1TV MOSFET H-Bridge for DC motors
Currently, to operate DC motors allowing operation in both directions of rotation are used, in most cases, circuits with transistors MOSFET instead of the generic keys SW1 to SW4 mentioned above. Some designers prefer to use P-channel transistors for the top sides and N for the lower channel. The advantage of this design concept is that the voltages required to activate the Gates of the P-channel transistors may draw directly from the supply used for the motor. If instead we use N-channel transistors on the upper side of the H, the voltage needed to activate the Gates must come from a booster to operate above the nominal motor power. Observe the following picture to understand this concept:
switches replaced by transistors Within the H-bridge MOSFET and power flow to achieve the two senses of giro.Para obtain a given rotation (any), as we discussed in the initial examples, IRFZ44N MOSFET transistors shown in picture must behave like real keys switches. As seen from the transistor data sheet used for this type of N-channel MOSFET transistor drive at full capacity, offering the least resistance between Drain and Source, Gate voltage source must be about more positive and order from 2 to 4 Volts. Assuming that the transistor Q1 (in rotation) and Q3 (in the other direction of rotation) offer the least resistance, the potential of 12 Volts feeding the respective Drains will (depending on the selected turn) to the motor, as shown in the figure above.
But back on the theory that exist in the Source 12Volts at the Gate we apply a voltage between 14 and 16 Volts, ie, 2 to 4 volts above the source. Otherwise, the voltage needed to activate the transistor at maximum driving is deducted from the power supply and the motor will reach 10 volts or less. Thus, we will have a maximum current flow through Drain - Source to turn the motor as possible, with a potential difference of 2 volts or more between these two terminals the transistor. This amounts, in the words of power, that 2 Volts multiplied by the maximum motor current is a power dissipated as heat in the transistor. The greater the power required to operate the motor, the greater the heat generated by the transistors, ergo, the greater the size of the heatsinks. This, of course, speak very bad circuit designer who will never understand why so hot transistors in the upper branches.
switches replaced by transistors Within the H-bridge MOSFET and power flow to achieve the two senses of giro.Para obtain a given rotation (any), as we discussed in the initial examples, IRFZ44N MOSFET transistors shown in picture must behave like real keys switches. As seen from the transistor data sheet used for this type of N-channel MOSFET transistor drive at full capacity, offering the least resistance between Drain and Source, Gate voltage source must be about more positive and order from 2 to 4 Volts. Assuming that the transistor Q1 (in rotation) and Q3 (in the other direction of rotation) offer the least resistance, the potential of 12 Volts feeding the respective Drains will (depending on the selected turn) to the motor, as shown in the figure above.
But back on the theory that exist in the Source 12Volts at the Gate we apply a voltage between 14 and 16 Volts, ie, 2 to 4 volts above the source. Otherwise, the voltage needed to activate the transistor at maximum driving is deducted from the power supply and the motor will reach 10 volts or less. Thus, we will have a maximum current flow through Drain - Source to turn the motor as possible, with a potential difference of 2 volts or more between these two terminals the transistor. This amounts, in the words of power, that 2 Volts multiplied by the maximum motor current is a power dissipated as heat in the transistor. The greater the power required to operate the motor, the greater the heat generated by the transistors, ergo, the greater the size of the heatsinks. This, of course, speak very bad circuit designer who will never understand why so hot transistors in the upper branches.
Subject: ESS.
Student: Pedro Jose Contreras Urbina
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