(EOL / Gustavo Martinez) .- Experts from Philips and the University of Pennsylvania, United States Together, have developed jointly a new MOSFET model, a more accurate calculation based and extensively used, the potential of superficie.De according to its developers, the new model produces better predictions of actual performance of integrated circuits that models currently used, specifically when it comes to large scale device integration and application of high frecuencia.Así it was announced that the model has been sent to the CMC (Compact Model Council), seeking to become the new industry standard model electrónica.El CMC promotes standardization in the use and implementation of mathematical models describing the behavior transistors, to facilitate the exchange of designs circuitos.El council was created in 1996 and consists of 27 semiconductor companies and suppliers of circuit simulators. The CMC is in the process of selecting a replacement for current standard MOSFET model, which will be replaced before year's end.
The model developed by Philips and the educational institution, is based on an approximation of the surface potential throughout the operating regime, while the current model is based on a simplified description of two regions boundaries and approximate mathematical techniques between the two new model was named límites.El PSP, because it was built based on the MOS model 11, Philips and model SP Pensilvania.En State University presenting this model, it was mentioned that the PSP provides a better description of behavior when the device operates at high frequencies, such as RF devices used in a variety of wireless devices. Additionally
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noted that substantially increases the complexity of the model, by solving the age-old problems of modeling of transistors, such as the incorporation of the gate current, the gate induced noise and static effects. "We that our model represents a significant advances in the modeling of transistors, "said Gennady Gildenblat, professor of electrical engineering at Pennsylvania State University." The new PSP model predicts more accurately manage the behavior of the transistor at frequencies up to 50GHz.
The model developed by Philips and the educational institution, is based on an approximation of the surface potential throughout the operating regime, while the current model is based on a simplified description of two regions boundaries and approximate mathematical techniques between the two new model was named límites.El PSP, because it was built based on the MOS model 11, Philips and model SP Pensilvania.En State University presenting this model, it was mentioned that the PSP provides a better description of behavior when the device operates at high frequencies, such as RF devices used in a variety of wireless devices. Additionally
embedFlash
noted that substantially increases the complexity of the model, by solving the age-old problems of modeling of transistors, such as the incorporation of the gate current, the gate induced noise and static effects. "We that our model represents a significant advances in the modeling of transistors, "said Gennady Gildenblat, professor of electrical engineering at Pennsylvania State University." The new PSP model predicts more accurately manage the behavior of the transistor at frequencies up to 50GHz.
Subject: ESS.
Student: Pedro Jose Contreras Urbina
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