Recent technological advances allow to reach the minimum resistance Rds (on) industry in applications OR-ing MOSFET
STMicroelectronics announced a new power MOSFET, the STV3000NH02L, developed with innovative technology, ribbon-bonding which achieves an Rds (on) typical of 800 micro-ohms (0.8 milliohms), to reduce losses and increase efficiency in power supplies. This new device, N-channel, high current, is particularly suitable for power supplies in parallel configuration, used to increase system reliability in server applications. The new transistor
20 V, which is also ideal for reducing secondary rectification losses in DC-DC converters, high efficiency, offering excellent protection against short circuit conditions, with very low downtime.
The parallel configuration of power is often used to provide redundancy in critical systems and increase capacity. Originally, diodes were used for this function, but were replaced by MOSFETs to achieve higher benefits. Now, the minimum loss of STV300NH02L is a new step forward in power efficiency.
more info.
Subject: ESS.
Student: Pedro Jose Contreras Urbina
Source: http://www.elektor.es/noticias/mosfet-de-potencia-para-aumentar-la-eficiencia-en.374049.lynkx
STMicroelectronics announced a new power MOSFET, the STV3000NH02L, developed with innovative technology, ribbon-bonding which achieves an Rds (on) typical of 800 micro-ohms (0.8 milliohms), to reduce losses and increase efficiency in power supplies. This new device, N-channel, high current, is particularly suitable for power supplies in parallel configuration, used to increase system reliability in server applications. The new transistor
20 V, which is also ideal for reducing secondary rectification losses in DC-DC converters, high efficiency, offering excellent protection against short circuit conditions, with very low downtime.
The parallel configuration of power is often used to provide redundancy in critical systems and increase capacity. Originally, diodes were used for this function, but were replaced by MOSFETs to achieve higher benefits. Now, the minimum loss of STV300NH02L is a new step forward in power efficiency.
more info.
Subject: ESS.
Student: Pedro Jose Contreras Urbina
Source: http://www.elektor.es/noticias/mosfet-de-potencia-para-aumentar-la-eficiencia-en.374049.lynkx
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